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onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG

RS Stock No.: 189-0485Brand: onsemiManufacturers Part No.: NTMJS0D9N04CLTWG
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

330 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.9mm

Length

5mm

Typical Gate Charge @ Vgs

143 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

1.2mm

Minimum Operating Temperature

-55 °C

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Stock information temporarily unavailable.

€ 16.95

€ 3.39 Each (In a Pack of 5) (ex VAT)

€ 20.17

€ 4.034 Each (In a Pack of 5) (inc. VAT)

onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Select packaging type

€ 16.95

€ 3.39 Each (In a Pack of 5) (ex VAT)

€ 20.17

€ 4.034 Each (In a Pack of 5) (inc. VAT)

onsemi N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK8 NTMJS0D9N04CLTWG
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45€ 3.39€ 16.95
50 - 95€ 2.98€ 14.90
100+€ 2.61€ 13.05

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

330 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.9mm

Length

5mm

Typical Gate Charge @ Vgs

143 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

1.2mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more