Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
196 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.28mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
Standard
5
P.O.A.
Standard
5
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
196 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.28mm
Minimum Operating Temperature
-55 °C
Product details