Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
0.95mm
Country of Origin
Thailand
Product details
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
P.O.A.
Each (In a Pack of 15) (ex VAT)
15
P.O.A.
Each (In a Pack of 15) (ex VAT)
15
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Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
0.95mm
Country of Origin
Thailand
Product details