SiC N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247N ROHM SCT3060ALGC11

RS Stock No.: 150-1454Brand: ROHMManufacturers Part No.: SCT3060ALGC11
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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

79.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

134 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

16mm

Typical Gate Charge @ Vgs

58 nC @ 18 V

Width

5mm

Number of Elements per Chip

1

Height

21mm

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P.O.A.

SiC N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247N ROHM SCT3060ALGC11

P.O.A.

SiC N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247N ROHM SCT3060ALGC11
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

79.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

134 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

16mm

Typical Gate Charge @ Vgs

58 nC @ 18 V

Width

5mm

Number of Elements per Chip

1

Height

21mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more