Semikron SKM100GB125DN Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS2, Panel Mount
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Dual Half Bridge
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94.5 x 34.5 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Width
34.5mm
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 299.30
Each (ex VAT)
€ 356.17
Each (inc VAT)
1
€ 299.30
Each (ex VAT)
€ 356.17
Each (inc VAT)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 1 | € 299.30 |
| 2 - 4 | € 288.68 |
| 5 - 9 | € 278.58 |
| 10 - 19 | € 268.32 |
| 20+ | € 258.61 |
Ideate. Create. Collaborate
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No hidden fees!
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Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Dual Half Bridge
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94.5 x 34.5 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Width
34.5mm
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products