Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum Collector Emitter Voltage
125 V
Package Type
TO-3
Mounting Type
Through Hole
Maximum Power Dissipation
300 W
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Dimensions
8.7 x 39.5 x 26.2mm
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Please check again later.
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P.O.A.
STMicroelectronics BUT100 NPN Bipolar Transistor, 125 V, 3-Pin TO-3
1
P.O.A.
STMicroelectronics BUT100 NPN Bipolar Transistor, 125 V, 3-Pin TO-3
Stock information temporarily unavailable.
1
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum Collector Emitter Voltage
125 V
Package Type
TO-3
Mounting Type
Through Hole
Maximum Power Dissipation
300 W
Maximum Collector Base Voltage
200 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Dimensions
8.7 x 39.5 x 26.2mm