Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
26.67mm
Maximum Operating Temperature
+200 °C
Height
4.11mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 113.89
€ 113.89 Each (ex VAT)
€ 135.53
€ 135.53 Each (inc. VAT)
Standard
1
€ 113.89
€ 113.89 Each (ex VAT)
€ 135.53
€ 135.53 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| quantity | Unit price |
|---|---|
| 1 - 4 | € 113.89 |
| 5 - 9 | € 113.34 |
| 10+ | € 111.51 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
26.67mm
Maximum Operating Temperature
+200 °C
Height
4.11mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.


