Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 4,825.00
€ 1.93 Each (On a Reel of 2500) (ex VAT)
€ 5,741.75
€ 2.297 Each (On a Reel of 2500) (inc. VAT)
2500
€ 4,825.00
€ 1.93 Each (On a Reel of 2500) (ex VAT)
€ 5,741.75
€ 2.297 Each (On a Reel of 2500) (inc. VAT)
2500
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Please check again later.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details