Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Stock information temporarily unavailable.
€ 11.75
€ 2.35 Each (In a Pack of 5) (ex VAT)
€ 13.98
€ 2.796 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 11.75
€ 2.35 Each (In a Pack of 5) (ex VAT)
€ 13.98
€ 2.796 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | € 2.35 | € 11.75 |
| 50 - 245 | € 1.93 | € 9.65 |
| 250 - 495 | € 1.49 | € 7.45 |
| 500+ | € 1.36 | € 6.80 |
Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
UL
Width
6.2mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.