STMicroelectronics, Type N-Channel IGBT, 30 A 420 V, 3-Pin TO-263, Surface

RS Stock No.: 810-3485PBrand: STMicroelectronicsManufacturers Part No.: STGB18N40LZT4
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Technical Document

Specifications

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

420V

Maximum Power Dissipation Pd

150W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

16 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Series

Automotive Grade

Automotive Standard

AEC-Q101

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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View all in IGBTs

Stock information temporarily unavailable.

€ 13.20

€ 2.64 Each (Supplied on a Reel) (ex VAT)

€ 15.71

€ 3.142 Each (Supplied on a Reel) (inc. VAT)

STMicroelectronics, Type N-Channel IGBT, 30 A 420 V, 3-Pin TO-263, Surface
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5€ 13.20
10€ 26.40
15€ 39.60
20€ 52.80
25€ 66.00
30€ 79.20
35€ 92.40
40€ 105.60
45€ 118.80
50€ 132.00
55€ 145.20
60€ 158.40
65€ 171.60
70€ 184.80
75€ 198.00

€ 13.20

€ 2.64 Each (Supplied on a Reel) (ex VAT)

€ 15.71

€ 3.142 Each (Supplied on a Reel) (inc. VAT)

STMicroelectronics, Type N-Channel IGBT, 30 A 420 V, 3-Pin TO-263, Surface

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5€ 13.20
10€ 26.40
15€ 39.60
20€ 52.80
25€ 66.00
30€ 79.20
35€ 92.40
40€ 105.60
45€ 118.80
50€ 132.00
55€ 145.20
60€ 158.40
65€ 171.60
70€ 184.80
75€ 198.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

420V

Maximum Power Dissipation Pd

150W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

16 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Series

Automotive Grade

Automotive Standard

AEC-Q101

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more