STMicroelectronics STGD5NB120SZT4 IGBT, 10 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
75 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+150 °C
Energy Rating
12.68mJ
Minimum Operating Temperature
-55 °C
Gate Capacitance
430pF
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 10.95
€ 2.19 Each (In a Pack of 5) (ex VAT)
€ 13.03
€ 2.606 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 10.95
€ 2.19 Each (In a Pack of 5) (ex VAT)
€ 13.03
€ 2.606 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 2.19 | € 10.95 |
| 25 - 45 | € 2.11 | € 10.55 |
| 50 - 120 | € 1.93 | € 9.65 |
| 125 - 245 | € 1.78 | € 8.90 |
| 250+ | € 1.70 | € 8.50 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
75 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+150 °C
Energy Rating
12.68mJ
Minimum Operating Temperature
-55 °C
Gate Capacitance
430pF
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products