STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STH150N10F7-2

RS Stock No.: 860-7523Brand: STMicroelectronicsManufacturers Part No.: STH150N10F7-2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

DeepGate, STripFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

10.57mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.8mm

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 11.12

€ 5.56 Each (In a Pack of 2) (ex VAT)

€ 13.23

€ 6.616 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STH150N10F7-2
Select packaging type

€ 11.12

€ 5.56 Each (In a Pack of 2) (ex VAT)

€ 13.23

€ 6.616 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STH150N10F7-2

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
2 - 8€ 5.56€ 11.12
10 - 18€ 5.35€ 10.70
20 - 48€ 4.91€ 9.82
50 - 98€ 4.46€ 8.92
100+€ 4.33€ 8.66

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

DeepGate, STripFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

10.57mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.8mm

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more