Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
10.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.8mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 11.12
€ 5.56 Each (In a Pack of 2) (ex VAT)
€ 13.23
€ 6.616 Each (In a Pack of 2) (inc. VAT)
Standard
2
€ 11.12
€ 5.56 Each (In a Pack of 2) (ex VAT)
€ 13.23
€ 6.616 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | € 5.56 | € 11.12 |
| 10 - 18 | € 5.35 | € 10.70 |
| 20 - 48 | € 4.91 | € 9.82 |
| 50 - 98 | € 4.46 | € 8.92 |
| 100+ | € 4.33 | € 8.66 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
10.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.8mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


