Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
0.95mm
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Product Details
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Stock information temporarily unavailable.
€ 14.90
€ 1.49 Each (In a Pack of 10) (ex VAT)
€ 17.73
€ 1.773 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 14.90
€ 1.49 Each (In a Pack of 10) (ex VAT)
€ 17.73
€ 1.773 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 1.49 | € 14.90 |
| 100 - 490 | € 1.02 | € 10.20 |
| 500+ | € 0.84 | € 8.40 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
0.95mm
Length
6.2mm
Standards/Approvals
No
Width
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Product Details
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.