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N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL8N10LF3

RS Stock No.: 165-8008Brand: STMicroelectronicsManufacturers Part No.: STL8N10LF3
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

STripFET F3

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.15mm

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

China

Product details

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 4,830.00

€ 1.61 Each (On a Reel of 3000) (ex VAT)

€ 5,747.70

€ 1.916 Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL8N10LF3

€ 4,830.00

€ 1.61 Each (On a Reel of 3000) (ex VAT)

€ 5,747.70

€ 1.916 Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL8N10LF3
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

STripFET F3

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.15mm

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

China

Product details

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more