STMicroelectronics STripFET F3 N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL8N10LF3
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
STripFET F3
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.15mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 20.90
€ 2.09 Each (In a Pack of 10) (ex VAT)
€ 24.87
€ 2.487 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 20.90
€ 2.09 Each (In a Pack of 10) (ex VAT)
€ 24.87
€ 2.487 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 20 | € 2.09 | € 20.90 |
| 30 - 90 | € 2.06 | € 20.60 |
| 100 - 490 | € 1.64 | € 16.40 |
| 500 - 990 | € 1.33 | € 13.30 |
| 1000+ | € 1.31 | € 13.10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
STripFET F3
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.15mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products