STMicroelectronics MDmesh M2 N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2

RS Stock No.: 791-7813Brand: STMicroelectronicsManufacturers Part No.: STP18N60M2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

15.75mm

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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€ 15.65

€ 3.13 Each (In a Pack of 5) (ex VAT)

€ 18.62

€ 3.725 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2
Select packaging type

€ 15.65

€ 3.13 Each (In a Pack of 5) (ex VAT)

€ 18.62

€ 3.725 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 13 A, 650 V, 3-Pin TO-220 STP18N60M2

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
5 - 20€ 3.13€ 15.65
25 - 45€ 3.03€ 15.15
50 - 120€ 2.77€ 13.85
125 - 245€ 2.53€ 12.65
250+€ 2.43€ 12.15

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Height

15.75mm

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more