Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
±20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 11.86
€ 5.93 Each (In a Pack of 2) (ex VAT)
€ 14.11
€ 7.057 Each (In a Pack of 2) (inc. VAT)
Standard
2
€ 11.86
€ 5.93 Each (In a Pack of 2) (ex VAT)
€ 14.11
€ 7.057 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | € 5.93 | € 11.86 |
| 10 - 98 | € 5.14 | € 10.28 |
| 100 - 498 | € 4.59 | € 9.18 |
| 500+ | € 4.54 | € 9.08 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
2.7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Maximum Gate Source Voltage Vgs
±20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


