Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
45W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 109.50
€ 2.19 Each (In a Tube of 50) (ex VAT)
€ 130.30
€ 2.606 Each (In a Tube of 50) (inc. VAT)
50
€ 109.50
€ 2.19 Each (In a Tube of 50) (ex VAT)
€ 130.30
€ 2.606 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 2.19 | € 109.50 |
| 100 - 450 | € 1.88 | € 94.00 |
| 500 - 950 | € 1.70 | € 85.00 |
| 1000 - 4950 | € 1.62 | € 81.00 |
| 5000+ | € 1.38 | € 69.00 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
45W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.3mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


