Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 120.00
€ 2.40 Each (In a Tube of 50) (ex VAT)
€ 142.80
€ 2.856 Each (In a Tube of 50) (inc. VAT)
50
€ 120.00
€ 2.40 Each (In a Tube of 50) (ex VAT)
€ 142.80
€ 2.856 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 2.40 | € 120.00 |
| 100+ | € 2.32 | € 116.00 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.4mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


