Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
124 nC @ 10 V
Height
20.15mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 159.90
€ 5.33 Each (In a Tube of 30) (ex VAT)
€ 190.28
€ 6.343 Each (In a Tube of 30) (inc. VAT)
30
€ 159.90
€ 5.33 Each (In a Tube of 30) (ex VAT)
€ 190.28
€ 6.343 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | € 5.33 | € 159.90 |
| 60+ | € 5.12 | € 153.60 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
MDmesh
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
124 nC @ 10 V
Height
20.15mm
Product details


