Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.63e+007 Ω
Maximum Gate Threshold Voltage
1V
Number of Elements per Chip
1
Transistor Material
Silicon
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Stock information temporarily unavailable.
P.O.A.
Silicon P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Toshiba SSM3J338R,LF(T
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Production pack (Reel)
50
P.O.A.
Silicon P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Toshiba SSM3J338R,LF(T
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.63e+007 Ω
Maximum Gate Threshold Voltage
1V
Number of Elements per Chip
1
Transistor Material
Silicon