Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
€ 17.10
€ 3.42 Each (In a Pack of 5) (ex VAT)
€ 20.35
€ 4.07 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 17.10
€ 3.42 Each (In a Pack of 5) (ex VAT)
€ 20.35
€ 4.07 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 3.42 | € 17.10 |
25 - 45 | € 2.79 | € 13.95 |
50 - 120 | € 2.58 | € 12.90 |
125 - 245 | € 2.40 | € 12.00 |
250+ | € 2.19 | € 10.95 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details