Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

RS Stock No.: 125-0541Brand: ToshibaManufacturers Part No.: TK16E60W5,S1VX(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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€ 9.25

€ 1.85 Each (In a Pack of 5) (ex VAT)

€ 11.01

€ 2.202 Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

5

Available in multiples of 5
5€ 9.25
10€ 18.50
15€ 27.75
20€ 37.00
25€ 28.00
30€ 33.60
35€ 39.20
40€ 44.80
45€ 50.40
50€ 52.00
55€ 57.20
60€ 62.40
65€ 67.60
70€ 72.80
75€ 78.00

€ 9.25

€ 1.85 Each (In a Pack of 5) (ex VAT)

€ 11.01

€ 2.202 Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W5,S1VX(S

Stock information temporarily unavailable.

5

Available in multiples of 5
5€ 9.25
10€ 18.50
15€ 27.75
20€ 37.00
25€ 28.00
30€ 33.60
35€ 39.20
40€ 44.80
45€ 50.40
50€ 52.00
55€ 57.20
60€ 62.40
65€ 67.60
70€ 72.80
75€ 78.00

Stock information temporarily unavailable.

quantityUnit pricePer Pack
5 - 20€ 1.85€ 9.25
25 - 45€ 1.12€ 5.60
50 - 120€ 1.04€ 5.20
125+€ 1.04€ 5.20

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more