N-Channel MOSFET, 22 A, 100 V, 3-Pin TO-220SIS Toshiba TK22A10N1,S4X(S

RS Stock No.: 827-6176Brand: ToshibaManufacturers Part No.: TK22A10N1,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Width

4.5mm

Transistor Material

Si

Series

TK

Height

15mm

Country of Origin

China

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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P.O.A.

N-Channel MOSFET, 22 A, 100 V, 3-Pin TO-220SIS Toshiba TK22A10N1,S4X(S
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 6.

Production -

Available in multiples of 6.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

6

Available in multiples of 6
6P.O.A.
12P.O.A.
18P.O.A.
24P.O.A.
30P.O.A.
36P.O.A.
42P.O.A.
48P.O.A.
54P.O.A.
60P.O.A.
66P.O.A.
72P.O.A.
78P.O.A.
84P.O.A.
90P.O.A.

P.O.A.

N-Channel MOSFET, 22 A, 100 V, 3-Pin TO-220SIS Toshiba TK22A10N1,S4X(S
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 6.

Production -

Available in multiples of 6.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

6

Available in multiples of 6
6P.O.A.
12P.O.A.
18P.O.A.
24P.O.A.
30P.O.A.
36P.O.A.
42P.O.A.
48P.O.A.
54P.O.A.
60P.O.A.
66P.O.A.
72P.O.A.
78P.O.A.
84P.O.A.
90P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Width

4.5mm

Transistor Material

Si

Series

TK

Height

15mm

Country of Origin

China

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more