Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
€ 261.00
€ 5.22 Each (In a Tube of 50) (ex VAT)
€ 310.59
€ 6.212 Each (In a Tube of 50) (inc. VAT)
50
€ 261.00
€ 5.22 Each (In a Tube of 50) (ex VAT)
€ 310.59
€ 6.212 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | € 5.22 | € 261.00 |
| 250 - 450 | € 4.78 | € 239.00 |
| 500+ | € 4.44 | € 222.00 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details


