Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
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€ 8.30
€ 0.83 Each (In a Pack of 10) (ex VAT)
€ 9.88
€ 0.988 Each (In a Pack of 10) (inc. VAT)
10
€ 8.30
€ 0.83 Each (In a Pack of 10) (ex VAT)
€ 9.88
€ 0.988 Each (In a Pack of 10) (inc. VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | € 0.83 | € 8.30 |
50 - 90 | € 0.76 | € 7.60 |
100 - 490 | € 0.76 | € 7.60 |
500 - 990 | € 0.73 | € 7.30 |
1000+ | € 0.73 | € 7.30 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details