N-Channel MOSFET, 12 A, 100 V, 6-Pin SC-70 Vishay Siliconix SiA110DJ-T1-GE3

RS Stock No.: 178-3668Brand: Vishay SiliconixManufacturers Part No.: SiA110DJ-T1-GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

SC-70

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Width

1.35mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

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P.O.A.

N-Channel MOSFET, 12 A, 100 V, 6-Pin SC-70 Vishay Siliconix SiA110DJ-T1-GE3

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

N-Channel MOSFET, 12 A, 100 V, 6-Pin SC-70 Vishay Siliconix SiA110DJ-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

SC-70

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Width

1.35mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more