Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 3 x 3
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-12 V, +16 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
3mm
Length
3mm
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.75mm
€ 1,560.00
€ 0.52 Each (On a Reel of 3000) (ex VAT)
€ 1,856.40
€ 0.619 Each (On a Reel of 3000) (inc. VAT)
3000
€ 1,560.00
€ 0.52 Each (On a Reel of 3000) (ex VAT)
€ 1,856.40
€ 0.619 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 3 x 3
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
16.7 W
Maximum Gate Source Voltage
-12 V, +16 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
3mm
Length
3mm
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.75mm


