Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
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€ 0.43
Each (On a Reel of 3000) (ex VAT)
€ 0.512
Each (On a Reel of 3000) (inc VAT)
3000
€ 0.43
Each (On a Reel of 3000) (ex VAT)
€ 0.512
Each (On a Reel of 3000) (inc VAT)
3000
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China