Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

RS Stock No.: 178-3916Brand: Vishay SiliconixManufacturers Part No.: SQJA76EP-T1_GE3
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5mm

Transistor Material

Si

Automotive Standard

AEC-Q101

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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€ 15.10

€ 1.51 Each (In a Pack of 10) (ex VAT)

€ 17.97

€ 1.797 Each (In a Pack of 10) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3
Select packaging type

€ 15.10

€ 1.51 Each (In a Pack of 10) (ex VAT)

€ 17.97

€ 1.797 Each (In a Pack of 10) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
10 - 90€ 1.51€ 15.10
100 - 490€ 1.20€ 12.00
500 - 990€ 1.02€ 10.20
1000+€ 0.89€ 8.90

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5mm

Transistor Material

Si

Automotive Standard

AEC-Q101

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more