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Vishay N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250PBF

RS Stock No.: 919-0032Brand: VishayManufacturers Part No.: IRFP250PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 84.25

€ 3.37 Each (In a Tube of 25) (ex VAT)

€ 100.26

€ 4.01 Each (In a Tube of 25) (inc. VAT)

Vishay N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250PBF

€ 84.25

€ 3.37 Each (In a Tube of 25) (ex VAT)

€ 100.26

€ 4.01 Each (In a Tube of 25) (inc. VAT)

Vishay N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC IRFP250PBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
25 - 25€ 3.37€ 84.25
50 - 100€ 3.34€ 83.50
125+€ 3.21€ 80.25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more