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Vishay N-Channel MOSFET, 16 A, 600 V, 3-Pin TO-247AC IRFPC60LCPBF

RS Stock No.: 541-0216Brand: VishayManufacturers Part No.: IRFPC60LCPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

280 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFPC60LC 16A 600V 25pc
P.O.A.1 Tube of 25 (ex VAT)
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€ 5.93

€ 5.93 Each (ex VAT)

€ 7.06

€ 7.06 Each (inc. VAT)

Vishay N-Channel MOSFET, 16 A, 600 V, 3-Pin TO-247AC IRFPC60LCPBF
Select packaging type

€ 5.93

€ 5.93 Each (ex VAT)

€ 7.06

€ 7.06 Each (inc. VAT)

Vishay N-Channel MOSFET, 16 A, 600 V, 3-Pin TO-247AC IRFPC60LCPBF
Stock information temporarily unavailable.
Select packaging type

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quantityUnit price
1 - 9€ 5.93
10 - 49€ 5.77
50 - 99€ 5.51
100 - 249€ 4.96
250+€ 4.72

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRFPC60LC 16A 600V 25pc
P.O.A.1 Tube of 25 (ex VAT)

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

280 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRFPC60LC 16A 600V 25pc
P.O.A.1 Tube of 25 (ex VAT)