Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 115.00
€ 1.15 Each (Supplied on a Reel) (ex VAT)
€ 136.85
€ 1.368 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 115.00
€ 1.15 Each (Supplied on a Reel) (ex VAT)
€ 136.85
€ 1.368 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 240 | € 1.15 | € 11.50 |
| 250 - 490 | € 1.07 | € 10.70 |
| 500 - 990 | € 1.02 | € 10.20 |
| 1000+ | € 0.97 | € 9.70 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details


