Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 115.00
€ 1.15 Each (Supplied on a Reel) (ex VAT)
€ 136.85
€ 1.368 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 115.00
€ 1.15 Each (Supplied on a Reel) (ex VAT)
€ 136.85
€ 1.368 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
100 - 240 | € 1.15 | € 11.50 |
250 - 490 | € 1.07 | € 10.70 |
500 - 990 | € 1.02 | € 10.20 |
1000+ | € 0.86 | € 8.60 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Country of Origin
Malaysia
Product details