Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 83.00
€ 3.32 Each (Supplied in a Tube) (ex VAT)
€ 98.77
€ 3.951 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
25
€ 83.00
€ 3.32 Each (Supplied in a Tube) (ex VAT)
€ 98.77
€ 3.951 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 25 - 45 | € 3.32 | € 16.60 |
| 50 - 120 | € 3.18 | € 15.90 |
| 125 - 245 | € 3.03 | € 15.15 |
| 250+ | € 2.87 | € 14.35 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


