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N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC Vishay SI4056DY-T1-GE3

RS Stock No.: 787-9137Brand: VishayManufacturers Part No.: SI4056DY-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

31 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

19.6 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 5.90

€ 1.18 Each (In a Pack of 5) (ex VAT)

€ 7.02

€ 1.404 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC Vishay SI4056DY-T1-GE3
Select packaging type

€ 5.90

€ 1.18 Each (In a Pack of 5) (ex VAT)

€ 7.02

€ 1.404 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC Vishay SI4056DY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 45€ 1.18€ 5.90
50 - 245€ 1.03€ 5.15
250 - 495€ 0.86€ 4.30
500 - 1245€ 0.83€ 4.15
1250+€ 0.78€ 3.90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

31 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

19.6 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more