Dual N/P-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin SOIC Vishay SI4511DY-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
3.7 A, 7.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ, 50 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, -12 V, +12 V, +16 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V, 17 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
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P.O.A.
Each (Supplied as a Tape) (ex VAT)
Standard
10
P.O.A.
Each (Supplied as a Tape) (ex VAT)
Standard
10
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Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
3.7 A, 7.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ, 50 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, -12 V, +12 V, +16 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V, 17 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products