Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 1.08
Each (In a Pack of 10) (ex VAT)
€ 1.285
Each (In a Pack of 10) (inc VAT)
10
€ 1.08
Each (In a Pack of 10) (ex VAT)
€ 1.285
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | € 1.08 | € 10.80 |
100 - 240 | € 1.03 | € 10.30 |
250 - 490 | € 0.96 | € 9.60 |
500 - 990 | € 0.91 | € 9.10 |
1000+ | € 0.86 | € 8.60 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details