Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
€ 140.00
€ 0.70 Each (Supplied on a Reel) (ex VAT)
€ 166.60
€ 0.833 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
€ 140.00
€ 0.70 Each (Supplied on a Reel) (ex VAT)
€ 166.60
€ 0.833 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
200
| quantity | Unit price | Per Reel |
|---|---|---|
| 200 - 480 | € 0.70 | € 14.00 |
| 500 - 980 | € 0.63 | € 12.60 |
| 1000 - 1980 | € 0.55 | € 11.00 |
| 2000+ | € 0.47 | € 9.40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products