SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

RS Stock No.: 192-3509Brand: WolfspeedManufacturers Part No.: C3M0280090J
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Width

9.12mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

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€ 6.98

Each (In a Pack of 2) (ex VAT)

€ 8.306

Each (In a Pack of 2) (inc VAT)

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

€ 6.98

Each (In a Pack of 2) (ex VAT)

€ 8.306

Each (In a Pack of 2) (inc VAT)

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Pack
2 - 18€ 6.98€ 13.96
20+€ 6.86€ 13.72

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Width

9.12mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Country of Origin

China