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MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Infineon AUIRFSL4115 N-channel MOSFET, 99 A, 150 V AUIRF, 3-Pin TO-262 Infineon N 99 A 150 V 12.1 mΩ 5V 3V ±20 V TO-262 Through Hole 3 Single Enhancement Power MOSFET 375 W 5270 pF @ 50 V 77 nC @ 10 V 10.67 x 9.65 x 4.83mm 41 ns AUIRF 18 ns 97s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon AUIRFSL4115 N-channel MOSFET, 99 A, 150 V AUIRF, 3-Pin TO-262 Infineon N 99 A 150 V 12.1 mΩ 5V 3V ±20 V TO-262 Through Hole 3 Single Enhancement Power MOSFET 375 W 5270 pF @ 50 V 77 nC @ 10 V 10.67 x 9.65 x 4.83mm 41 ns AUIRF 18 ns 97s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon AUIRFZ24NSTRL N-channel MOSFET, 17 A, 55 V AUIRFZ24N, 2 + Tab-Pin D2PAK Infineon N 17 A 55 V 70 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 45 W 370 pF @ 25 V 20 nC @ 10 V 10.67 x 9.65 x 4.83mm 19 ns AUIRFZ24N 4.9 ns 4.5s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon AUIRFZ24NSTRL N-channel MOSFET, 17 A, 55 V AUIRFZ24N, 2 + Tab-Pin D2PAK Infineon N 17 A 55 V 70 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 45 W 370 pF @ 25 V 20 nC @ 10 V 10.67 x 9.65 x 4.83mm 19 ns AUIRFZ24N 4.9 ns 4.5s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon IRF1010EZSTRLP N-channel MOSFET, 84 A, 60 V IRF1010EZS, 2 + Tab-Pin D2PAK Infineon N 84 A 60 V 8.5 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 140 W 2810 pF @ 25 V 58 nC @ 10 V 10.67 x 9.65 x 4.83mm 38 ns IRF1010EZS 19 ns 200s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon IRF1010EZSTRLP N-channel MOSFET, 84 A, 60 V IRF1010EZS, 2 + Tab-Pin D2PAK
  • € 0.71
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Infineon N 84 A 60 V 8.5 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 140 W 2810 pF @ 25 V 58 nC @ 10 V 10.67 x 9.65 x 4.83mm 38 ns IRF1010EZS 19 ns 200s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon IRF3707ZSTRLPBF N-channel MOSFET, 59 A, 30 V IRF3707ZS, 2 + Tab-Pin D2PAK Infineon N 59 A 30 V 12.5 mΩ 2.25V 1.35V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 57 W 1210 pF @ 25 V 9.7 nC @ 4.5 V 10.67 x 9.65 x 4.83mm 12 ns IRF3707ZS 9.8 ns 81S 9.65mm 4.83mm 10.67mm 1V - +175 °C 1 -55 °C -
Infineon IRF3707ZSTRLPBF N-channel MOSFET, 59 A, 30 V IRF3707ZS, 2 + Tab-Pin D2PAK
  • € 1.18
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Infineon N 59 A 30 V 12.5 mΩ 2.25V 1.35V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 57 W 1210 pF @ 25 V 9.7 nC @ 4.5 V 10.67 x 9.65 x 4.83mm 12 ns IRF3707ZS 9.8 ns 81S 9.65mm 4.83mm 10.67mm 1V - +175 °C 1 -55 °C -
Infineon IRF3710ZSTRLPBF N-channel MOSFET, 59 A, 100 V IRF3710ZS, 2 + Tab-Pin D2PAK Infineon N 59 A 100 V 18 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 160 W 2900 pF @ 25 V 82 nC @ 10 V 10.67 x 9.65 x 4.83mm 41 ns IRF3710ZS 17 ns 35s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon IRF3710ZSTRLPBF N-channel MOSFET, 59 A, 100 V IRF3710ZS, 2 + Tab-Pin D2PAK Infineon N 59 A 100 V 18 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 160 W 2900 pF @ 25 V 82 nC @ 10 V 10.67 x 9.65 x 4.83mm 41 ns IRF3710ZS 17 ns 35s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon IRF7463TRPBF N-channel MOSFET, 14 A, 30 V IRF7463, 8-Pin SOIC Infineon N 14 A 30 V 20 mΩ 2V 0.6V ±12 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3150 pF @ 15 V 34 nC @ 4.5 V 5 x 4 x 1.5mm 28 ns IRF7463 16 ns 41s 4mm 1.5mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF7463TRPBF N-channel MOSFET, 14 A, 30 V IRF7463, 8-Pin SOIC
  • € 0.73
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Infineon N 14 A 30 V 20 mΩ 2V 0.6V ±12 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3150 pF @ 15 V 34 nC @ 4.5 V 5 x 4 x 1.5mm 28 ns IRF7463 16 ns 41s 4mm 1.5mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF7805ZTRPBF N-channel MOSFET, 16 A, 30 V IRF7805Z, 8-Pin SO Infineon N 16 A 30 V 8.7 mΩ 2.25V 1.35V ±20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 2080 pF @ 15 V 18 nC @ 4.5 V 5 x 4 x 1.5mm 14 ns IRF7805Z 11 ns 64S 4mm 1.5mm 5mm 1V - +150 °C 1 -55 °C -
Infineon IRF7805ZTRPBF N-channel MOSFET, 16 A, 30 V IRF7805Z, 8-Pin SO
  • € 0.47
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Infineon N 16 A 30 V 8.7 mΩ 2.25V 1.35V ±20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 2080 pF @ 15 V 18 nC @ 4.5 V 5 x 4 x 1.5mm 14 ns IRF7805Z 11 ns 64S 4mm 1.5mm 5mm 1V - +150 °C 1 -55 °C -
Infineon IRF7809AVTRPBF N-channel MOSFET, 14.6 A, 30 V IRF7809AV, 8-Pin SO Infineon N 14.6 A 30 V 9 mΩ - 1V ±12 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3780 pF @ 16 V 41 nC @ 5 V 5 x 4 x 1.5mm 96 ns IRF7809AV 14 ns - 4mm 1.5mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF7809AVTRPBF N-channel MOSFET, 14.6 A, 30 V IRF7809AV, 8-Pin SO
  • € 0.51
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Infineon N 14.6 A 30 V 9 mΩ - 1V ±12 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3780 pF @ 16 V 41 nC @ 5 V 5 x 4 x 1.5mm 96 ns IRF7809AV 14 ns - 4mm 1.5mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF9410TRPBF N-channel MOSFET, 7 A, 30 V IRF9410, 8-Pin SO
  • € 0.34
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Infineon N 7 A 30 V 50 mΩ - 1V ±20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 550 pF @ 25 V 18 nC @ 10 V 5 x 4 x 1.5mm 23 ns IRF9410 7.3 ns 14s 4mm 1.5mm 5mm 1V - +150 °C 1 -55 °C -
Infineon IRF9410TRPBF N-channel MOSFET, 7 A, 30 V IRF9410, 8-Pin SO Infineon N 7 A 30 V 50 mΩ - 1V ±20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 550 pF @ 25 V 18 nC @ 10 V 5 x 4 x 1.5mm 23 ns IRF9410 7.3 ns 14s 4mm 1.5mm 5mm 1V - +150 °C 1 -55 °C -
Infineon IRF9910TRPBF Dual N-channel MOSFET, 12 A, 20 V IRF9910, 8-Pin SO
  • € 0.54
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Infineon N 12 A 20 V 18.3 mΩ 2.55V 1.65V ±20 V SO Surface Mount 8 - Enhancement Power MOSFET 2 W 1860 pF @ 10 V 15 nC @ 4.5 V 5 x 4 x 1.5mm 15 ns IRF9910 8.3 ns 27s 4mm 1.5mm 5mm 1V - +150 °C 2 -55 °C -
Infineon IRF9910TRPBF Dual N-channel MOSFET, 12 A, 20 V IRF9910, 8-Pin SO Infineon N 12 A 20 V 18.3 mΩ 2.55V 1.65V ±20 V SO Surface Mount 8 - Enhancement Power MOSFET 2 W 1860 pF @ 10 V 15 nC @ 4.5 V 5 x 4 x 1.5mm 15 ns IRF9910 8.3 ns 27s 4mm 1.5mm 5mm 1V - +150 °C 2 -55 °C -
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