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Infineon IPD25CN10NGATMA1 N-channel MOSFET, 35 A, 100 V IPD25CN10N G, 3 + 2 Tab-Pin DPAK
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 35 A
  • Package Type TO-252
  • Maximum Power Dissipation 71 W
  • Mounting Type Surface Mount
See similar products in MOSFET Transistors
Infineon IPT012N08N5ATMA1 N-channel MOSFET, 300 A, 80 V IPT012N08N5, 8 + Tab-Pin HSOF
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 300 A
  • Package Type HSOF
  • Maximum Power Dissipation 375 W
  • Mounting Type Surface Mount
See similar products in MOSFET Transistors
Infineon IPT015N10N5ATMA1 N-channel MOSFET, 300 A, 100 V IPT015N10N5, 8 + Tab-Pin HSOF
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 300 A
  • Package Type HSOF
  • Maximum Power Dissipation 375 W
  • Mounting Type Surface Mount
See similar products in MOSFET Transistors
Infineon SPA20N60C3XKSA1 N-channel MOSFET, 20.7 A, 600 V SPA20N60C3, 3 + Tab-Pin TO-220FP
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 20.7 A
  • Package Type TO-220FP
  • Maximum Power Dissipation 34.5 W
  • Mounting Type Through Hole
See similar products in MOSFET Transistors
Infineon IGBT IHW40N120R3FKSA1, 3-Pin TO-247 1200 V, 80 A
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 1200 V
See similar products in IGBT Transistors
Infineon AUIR3313STRL MOSFET AUIR3313, 5-Pin D2PAK
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Length 10.67mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 32 μs
See similar products in MOSFET Transistors
Infineon AUIR3313STRL MOSFET AUIR3313, 5-Pin D2PAK
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Length 10.67mm
  • Transistor Configuration Single
  • Typical Turn-On Delay Time 32 μs
See similar products in MOSFET Transistors
Infineon AUIRF2907Z N-channel MOSFET, 75 A, 75 V HEXFET, 3-Pin TO-220AB
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 75 A
  • Package Type TO-220AB
  • Maximum Power Dissipation 300 W
  • Mounting Type Through Hole
See similar products in MOSFET Transistors
  • € 0.12
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Infineon BAR6405WH6327XTSA1 Dual Common Cathode PIN Diode, 100mA, 150V, 3-Pin SOT-323 (SC-70)
  • Diode Configuration Common Cathode
  • Maximum Operating Temperature +125 °C
  • Number of Elements per Chip 2
  • Length 2mm
  • Maximum Forward Voltage 1.1V
See similar products in PIN Diodes
  • € 0.02
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Infineon BC850CWH6327XTSA1 NPN Transistor, 100 mA, 45 V, 3-Pin SOT-323
  • Maximum Collector Emitter Saturation Voltage 600 mV
  • Maximum Operating Temperature +150 °C
  • Maximum Operating Frequency 250 MHz
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 900 mV
See similar products in Bipolar Transistors
Infineon IGBT IGW50N65F5FKSA1, 3-Pin TO-247 650 V, 50 A
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IGBT IHW40N120R3FKSA1, 3-Pin TO-247 1200 V, 80 A
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 1200 V
See similar products in IGBT Transistors
Infineon IGBT IKP20N60TXKSA1, 3-Pin TO-220 600 V, 41 A
  • Maximum Operating Temperature +175 °C
  • Length 10.36mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT IKP20N60TXKSA1, 3-Pin TO-220 600 V, 41 A
  • Maximum Operating Temperature +175 °C
  • Length 10.36mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT IKW30N60H3FKSA1, 3-Pin TO-247 600 V, 60 A
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT IKW50N65F5FKSA1, 3-Pin TO-247 650 V, 80 A
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IPA60R280P6XKSA1 N-channel MOSFET, 13.8 A, 650 V CoolMOS P6, 3-Pin TO-220
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 13.8 A
  • Package Type TO-220
  • Maximum Power Dissipation 32 W
  • Mounting Type Through Hole
See similar products in MOSFET Transistors
Infineon IPA65R380E6XKSA1 N-channel MOSFET, 10.6 A, 700 V CoolMOS E6, 3-Pin TO-220
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 10.6 A
  • Package Type TO-220
  • Maximum Power Dissipation 31 W
  • Mounting Type Through Hole
See similar products in MOSFET Transistors
Infineon IPD053N08N3GATMA1 N-channel MOSFET, 90 A, 80 V IPD053N08N3 G, 3 + 2 Tab-Pin DPAK
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 90 A
  • Package Type TO-252
  • Maximum Power Dissipation 150 W
  • Mounting Type Surface Mount
See similar products in MOSFET Transistors
Infineon IPD068N10N3GATMA1 N-channel MOSFET, 90 A, 100 V IPD068N10N3 G, 3 + 2 Tab-Pin DPAK
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 90 A
  • Package Type TO-252
  • Maximum Power Dissipation 150 W
  • Mounting Type Surface Mount
See similar products in MOSFET Transistors
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