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MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
MOSFET N-CH 500mA 60V 7.5 Ohm TO-92-3 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 300V, 175mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 350V, 120mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 400V, 120mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 450V, 136mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 500V, 30mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Microchip DN3135K1-G N-channel MOSFET, 72 mA, 350 V Depletion DN3135, 3-Pin SOT
  • € 0.59
  • Each (On a Reel of 3000)
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Microchip N 72 mA 350 V 35 Ω - - -3.5 V SOT Surface Mount 3 Single Depletion Power MOSFET 360 mW 120 pF @ 25 V - 3.04 x 1.4 x 1.02mm 15 ns DN3135 10 ns - 1.4mm 1.02mm 3.04mm 1.8V +150 °C 1 -55 °C -
Microchip DN3135K1-G N-channel MOSFET, 72 mA, 350 V Depletion DN3135, 3-Pin SOT Microchip N 72 mA 350 V 35 Ω - - -3.5 V SOT Surface Mount 3 Single Depletion Power MOSFET 360 mW 120 pF @ 25 V - 3.04 x 1.4 x 1.02mm 15 ns DN3135 10 ns - 1.4mm 1.02mm 3.04mm 1.8V +150 °C 1 -55 °C -
Microchip MCP87050T-U/MF N-channel MOSFET, 100 A, 25 V MCP87, 8-Pin DFN
  • € 0.73
  • Each (On a Reel of 3300)
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Microchip N 100 A 25 V 6 mΩ 1.6V - -8 V, +10 V DFN Surface Mount 8 Single Enhancement Power MOSFET 2.2 W 1040 pF @ 12.5 V 12.5 nC @ 4.5 V 5 x 6 x 1mm 11 ns MCP87 5 ns - 6mm 1mm 5mm - +150 °C 1 -55 °C Si
Microchip MCP87130T-U/LC N-channel MOSFET, 42 A, 25 V MCP87, 8-Pin DFN
  • € 0.44
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Microchip N 42 A 25 V 17.3 mΩ 1.7V - -8 V, +10 V DFN Surface Mount 8 Single Enhancement Power MOSFET 1.8 W 400 pF @ 12.5 V 5.5 nC @ 4.5 V 3.3 x 3.3 x 1mm 4.2 ns MCP87 2.2 ns - 3.3mm 1mm 3.3mm - +150 °C 1 -55 °C Si
Microchip MIC94053YC6-TR P-channel MOSFET, 2 A, 6 V MIC9405, 6-Pin SOT-363 (SC-70)
  • € 0.64
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Microchip P 2 A 6 V 180 mΩ 1.2V 0.5V -6 V SOT-363 (SC-70) Surface Mount 6 Single Enhancement - 270 mW - - 2.2 x 1.35 x 1mm 60 ns MIC9405 15 ns - 1.35mm 1mm 2.2mm - +150 °C 1 -40 °C Si
Microchip TP2104N3-G P-channel MOSFET, 175 mA, 40 V, 3-Pin TO-92 Microchip P 175 mA 40 V 10 Ω 2V - -20 V, +20 V TO-92 Through Hole 3 Single Enhancement - 740 mW 35 pF @ -25 V - 5.08 x 4.06 x 5.33mm 5 ns - 4 ns 200s 4.06mm 5.33mm 5.08mm 2V +150 °C 1 -55 °C Si
Microchip VN2222LL-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N 230 mA 60 V 7.5 Ω 2.5V - -30 V, +30 V TO-92 Through Hole 3 Single Enhancement - 1 W 60 pF @ 25 V - 5.08 x 4.06 x 5.33mm 10 ns - 10 ns 100s 4.06mm 5.33mm 5.08mm 0.85V +150 °C 1 -55 °C Si
Microchip VP2106N3-G P-channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip P 250 mA 60 V 15 Ω 3.5V - -20 V, +20 V TO-92 Through Hole 3 Single Enhancement - 1 W 45 pF @ -25 V - 5.08 x 4.06 x 5.33mm 5 ns - 4 ns 200s 4.06mm 5.33mm 5.08mm 2V +150 °C 1 -55 °C Si
Microchip MIC94053YC6-TR P-channel MOSFET, 2 A, 6 V MIC9405, 6-Pin SOT-363 (SC-70) Microchip P 2 A 6 V 180 mΩ 1.2V 0.5V -6 V SOT-363 (SC-70) Surface Mount 6 Single Enhancement - 270 mW - - 2.2 x 1.35 x 1mm 60 ns MIC9405 15 ns - 1.35mm 1mm 2.2mm - +150 °C 1 -40 °C Si
Microchip LND01K1-G N-channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip N 330 mA 9 V 1.4 Ω - - -12 V, +0.6 V SOT-23 Surface Mount 5 Single Depletion - 360 mW 46 pF - 3.05 x 1.75 x 1.3mm 1 ns - 3.8 ns - 1.75mm 1.3mm 3.05mm - +125 °C 1 -25 °C Si
Microchip LND150N8-G N-channel MOSFET, 30 mA, 500 V Depletion, 4-Pin TO-243AA Microchip N 30 mA 500 V 1 kΩ 3V - -20 V, +20 V TO-243AA Surface Mount 4 Single Depletion Power MOSFET 1.6 W 7.5 pF @ 25 V - 4.6 x 2.6 x 1.6mm 100 ns - 90 ns - 2.6mm 1.6mm 4.6mm - +150 °C 1 -55 °C Si
Microchip DN3765K4-G N-channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip N 300 mA 650 V 8 Ω 3.5V - -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Depletion - 2.5 W 825 pF@ 25 V - 6.2 x 6.73 x 2.39mm 75 ns - 50 ns - 6.73mm 2.39mm 6.2mm - +150 °C 1 -55 °C Si
Microchip 2N7008-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N 230 mA 60 V 7.5 Ω 2.5V 1V -30 V, +30 V TO-92 Through Hole 3 Single Enhancement Power MOSFET 1 W 50 pF @ 25 V - 5.08 x 4.06 x 5.33mm 20 ns - 20 ns - 4.06mm 5.33mm 5.08mm 1.5V +150 °C 1 -55 °C Si
Microchip TP2104N3-G P-channel MOSFET, 175 mA, 40 V, 3-Pin TO-92 Microchip P 175 mA 40 V 10 Ω 2V - -20 V, +20 V TO-92 Through Hole 3 Single Enhancement - 740 mW 35 pF @ -25 V - 5.08 x 4.06 x 5.33mm 5 ns - 4 ns 200s 4.06mm 5.33mm 5.08mm 2V +150 °C 1 -55 °C Si
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