Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Country of Origin
China
Product details
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
€ 0.48
Each (Supplied on a Reel) (ex VAT)
€ 0.571
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
20
€ 0.48
Each (Supplied on a Reel) (ex VAT)
€ 0.571
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 80 | € 0.48 | € 9.60 |
100 - 180 | € 0.25 | € 5.00 |
200 - 980 | € 0.23 | € 4.60 |
1000 - 1980 | € 0.20 | € 4.00 |
2000+ | € 0.18 | € 3.60 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Country of Origin
China
Product details