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Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3

RS Stock No.: 124-2249Brand: VishayManufacturers Part No.: SUP70040E-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 23.75

€ 4.75 Each (In a Pack of 5) (ex VAT)

€ 28.26

€ 5.652 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3
Select packaging type

€ 23.75

€ 4.75 Each (In a Pack of 5) (ex VAT)

€ 28.26

€ 5.652 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45€ 4.75€ 23.75
50 - 120€ 3.58€ 17.90
125 - 245€ 3.29€ 16.45
250 - 495€ 2.98€ 14.90
500+€ 2.77€ 13.85

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more