Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 23.75
€ 4.75 Each (In a Pack of 5) (ex VAT)
€ 28.26
€ 5.652 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 23.75
€ 4.75 Each (In a Pack of 5) (ex VAT)
€ 28.26
€ 5.652 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 4.75 | € 23.75 |
50 - 120 | € 3.58 | € 17.90 |
125 - 245 | € 3.29 | € 16.45 |
250 - 495 | € 2.98 | € 14.90 |
500+ | € 2.77 | € 13.85 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China
Product details