Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
€ 2.39
Each (In a Pack of 5) (ex VAT)
€ 2.844
Each (In a Pack of 5) (inc. VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Select packaging type
Standard
5
€ 2.39
Each (In a Pack of 5) (ex VAT)
€ 2.844
Each (In a Pack of 5) (inc. VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 2.39 | € 11.95 |
50 - 120 | € 2.22 | € 11.10 |
125 - 245 | € 2.09 | € 10.45 |
250 - 495 | € 1.97 | € 9.85 |
500+ | € 1.87 | € 9.35 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC