Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
30 V
Package Type
TSOP-6
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
66 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
1.75mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
1.3mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0.55
Each (In a Pack of 50) (ex VAT)
€ 0.654
Each (In a Pack of 50) (inc VAT)
Standard
50
€ 0.55
Each (In a Pack of 50) (ex VAT)
€ 0.654
Each (In a Pack of 50) (inc VAT)
Standard
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | € 0.55 | € 27.50 |
250 - 450 | € 0.33 | € 16.50 |
500 - 1200 | € 0.30 | € 15.00 |
1250 - 2450 | € 0.30 | € 15.00 |
2500+ | € 0.28 | € 14.00 |
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
30 V
Package Type
TSOP-6
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
66 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
1.75mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
1.3mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.