Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
15.2 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
5.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 17.20
€ 1.72 Each (In a Pack of 10) (ex VAT)
€ 20.47
€ 2.047 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 17.20
€ 1.72 Each (In a Pack of 10) (ex VAT)
€ 20.47
€ 2.047 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | € 1.72 | € 17.20 |
50 - 90 | € 1.64 | € 16.40 |
100 - 240 | € 1.62 | € 16.20 |
250 - 490 | € 1.57 | € 15.70 |
500+ | € 0.99 | € 9.90 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
15.2 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
5.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.