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Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF

RS Stock No.: 541-0014Brand: InfineonManufacturers Part No.: IRF640NPBFDistrelec Article No.: 30341285
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

67 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Height

8.77mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
€ 2.047Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.

€ 1.12

€ 1.12 Each (ex VAT)

€ 1.33

€ 1.33 Each (inc. VAT)

Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF

€ 1.12

€ 1.12 Each (ex VAT)

€ 1.33

€ 1.33 Each (inc. VAT)

Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640NPBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9€ 1.12
10 - 49€ 1.04
50 - 99€ 0.99
100 - 249€ 0.91
250+€ 0.89

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
€ 2.047Each (In a Tube of 50) (ex VAT)

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

67 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Height

8.77mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB IRF640PBF
€ 2.047Each (In a Tube of 50) (ex VAT)