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Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

RS Stock No.: 284-720Brand: InfineonManufacturers Part No.: IMT65R039M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

€ 19.45

€ 19.45 Each (ex VAT)

€ 23.15

€ 23.15 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 19.45
2€ 38.90
3€ 58.35
4€ 77.80
5€ 97.25
6€ 116.70
7€ 136.15
8€ 155.60
9€ 175.05
10€ 177.50
11€ 195.25
12€ 213.00
13€ 230.75
14€ 248.50
15€ 266.25

€ 19.45

€ 19.45 Each (ex VAT)

€ 23.15

€ 23.15 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 19.45
2€ 38.90
3€ 58.35
4€ 77.80
5€ 97.25
6€ 116.70
7€ 136.15
8€ 155.60
9€ 175.05
10€ 177.50
11€ 195.25
12€ 213.00
13€ 230.75
14€ 248.50
15€ 266.25

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9€ 19.45
10 - 99€ 17.75
100+€ 16.63

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more